PART |
Description |
Maker |
BS616LV2018 |
Asynchronous 2M(128Kx16) bits Static RAM
|
BSI
|
BS616LV1016 |
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconductor
|
BS62LV2565 |
Asynchronous 256K(32Kx8) bits Static RAM From old datasheet system
|
BSI
|
TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位)的CMOS闪存 32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp. Toshiba Corporation
|
BS616LV4018 BS616LV4018EI BS616LV4018AC BS616LV401 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16 Asynchronous 4M(256Kx16) bits Static RAM From old datasheet system
|
Electronic Theatre Controls, Inc. Brilliance Semiconductor BSI ETC[ETC] List of Unclassifed Manufacturers
|
BS616LV8016 BS616LV8016FIP70 BS616LV8016FC BS616LV |
Asynchronous 8M(512Kx16) bits Static RAM From old datasheet system Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, Inc.
|
BS616LV1622 BS616LV1622TIP70 BS616LV1622TC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable From old datasheet system Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位) 256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
IDT72T51333 IDT72T51333L5BB IDT72T51333L5BB8 IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits 8Q x18 512K Multi-Queue, 2.5V
|
Integrated Device Technolog... IDT
|
BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007 |
Asynchronous 4M(512Kx8) bits Static RAM High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel surface mount silicon Zener diodes Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
IS42S16400C1-6T IS42S16400C1-6TL IS42S16400C1-6TLI |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|